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參數(shù)資料
| 型號(hào)： | MMBD1705AD87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.05 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | MMBD1705AD87Z |
MMBD1701/A
/
1703/A
/
1704/A
/
1705/A
MMBD1700 series, Rev. B1
Small Signal Diodes
MMBD1701/A / 1703/A / 1704/A / 1705/A
MARKING
MMBD1701 85
MMBD1701A 85A
MMBD1703 87
MMBD1703A 87A
MMBD1704 88
MMBD1704A 88A
MMBD1705 89
MMBD1705A 89A
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
2001 Fairchild Semiconductor Corporation
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
30
V
IF(AV)
Average Rectified Forward Current
50
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
250
mA
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
1
2
3
85
3
1
2
SOT-23
Connection Diagrams
1701
1703
1704
1705
11
3
2
1
2
3
1
Sym bol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 5.0 A
30
V
F
Forward Voltage
I
F = 10 A
I
F = 100 A
I
F = 1.0 m A
I
F = 10 m A
I
F = 20 m A
I
F = 50 m A
420
520
640
760
810
0.89
500
610
740
880
950
1.1
mV
V
I
R
Reverse Current
V
R = 20 V
50
nA
C
T
Total Capacitance
V
R = 0 , f = 1.0 M H z
1.0
pF
t
rr
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
I
F = IR = 10 m A , IRR = 1.0 m A ,
R
L = 100
I
F = IR = 10 m A , IRR = 1.0 m A ,
R
L = 100
0.7
1.0
ns
2NC
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