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參數(shù)資料
| 型號(hào)： | MMBD1405D87Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 200 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | MMBD1405D87Z |
MMBD1401
/
1403
/
1404
/
1405
MMBD1400 series, Rev. C
2001 Fairchild Semiconductor Corporation
Small Signal Diodes
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
MMBD1401 / 1403 / 1404 / 1405
Thermal Characteristics
Electrical Characteristics T
A = 25°C unless otherwise noted
MARKING
MMBD1401 29
MMBD1403
32
MMBD1404 35
MMBD1405
34
Symbol
Parameter
Value
Units
V
RRM
Maximum Repetitive Reverse Voltage
200
V
I
F(AV)
Average Rectified Forward Current
200
mA
IFSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
2.0
A
T
stg
Storage Temperature Range
-55 to +150
°C
T
J
Operating Junction Temperature
150
°C
Symbol
Parameter
Value
Units
P
D
Power Dissipation
350
mW
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
1
2
3
29
3
1
2
SOT-23
Connection Diagrams
1401
1403
1404
1405
11
3
2
1
2
3
1
Symbol
Parameter
Test Conditions
Min
Max
Units
V
R
Breakdown Voltage
I
R = 100 A
200
V
VF
Forward Voltage
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
760
800
920
1.0
1.1
mV
V
IR
Reverse Current
VR = 120 V
VR = 175 V
40
100
nA
CT
Total Capacitance
V
R = 0, f = 1.0 MHz
2.0
pF
t
rr
Reverse Recovery Time
I
F = IR = 30 mA, IRR = 3.0 mA,
R
L = 100
50
ns
2NC
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