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參數(shù)資料
| 型號： | MMBD1405AL99Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MMBD1405AL99Z |
MMBD1401A
/
1403A
/
1404A
/
1405A
MMBD1401A-1405A, Rev. A
MMBD1401A / 1403A / 1404A / 1405A
High Voltage General Purpose Diode
Sourced from Process 2V.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
MARKING
MMBD1401A A29
MMBD1404A
A33
MMBD1403A A32
MMBD1405A
A34
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
175
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
Tstg
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol
Characteristic
Max
Units
MMBD1401A-1405A*
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
SOT-23
3
1
2
1999 Fairchild Semiconductor Corporation
3
12
A29
CONNECTION DIAGRAMS
3
2
1
3
2
1
3
2
1
3
1
2 NC
1403A
1401A
1404A
1405A
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