參數(shù)資料
型號: MMBD1204S62Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
文件頁數(shù): 1/4頁
文件大小: 47K
代理商: MMBD1204S62Z
MMBD1201 / 1203 / 1204 / 1205
High Conductance Ultra Fast Diode
Sourced from Process 1P.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
50
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
2.0
A
Tstg
Storage Temperature Range
-55 to +150
°C
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Symbol
Characteristic
Max
Units
MMBD1201/1203/1204/1205*
PD
Total Device Dissipation
Derate above 25
°C
350
2.8
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
357
°C/W
CONNECTION DIAGRAMS
3
2
1
3
2
1
3
2
1
3
1
2 NC
1201
1204
1205
1203
24
3
12
MARKING
MMBD1201 24
MMBD1204A
27
MMBD1203 26
MMBD1205A
28
SOT-23
3
1
2
MMBD1201
/
1203
/
1204
/
1205
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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