參數(shù)資料
型號(hào): MMBD1010LT3
廠商: ON SEMICONDUCTOR
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁(yè)數(shù): 12/32頁(yè)
文件大?。?/td> 297K
代理商: MMBD1010LT3
MMBD1010LT1 MMBD2010T1 MMBD3010T1
3–51
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 A)
V(BR)
30
V
Reverse Voltage Leakage Current (VR = 75 V)(2)
IR
500
pA
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
VF
850
950
mV
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD
2.0
pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr
3.0
s
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a non–forward–biased condition.
Figure 1. Recovery Time Equivalent Test Circuit
Notes: 1. A 2.0 k
variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp trr
+10 V
2 k
820
0.1
F
DUT
VR
100
H
0.1
F
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
tr
tp
t
10%
90%
IF
IR
trr
t
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
相關(guān)PDF資料
PDF描述
MMBD3000T1 0.2 A, SILICON, SIGNAL DIODE
MMBD1000LT3 0.2 A, SILICON, SIGNAL DIODE, TO-236AB
MMBD3005T1 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
MMBD352WT3 SILICON, UHF BAND, MIXER DIODE
MMBF0201NLT3 300 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBD1011 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Surface Mount Switching Diode
MMBD101LT1 功能描述:肖特基二極管與整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MMBD101LT1G 功能描述:肖特基二極管與整流器 7V 225mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MMBD101TS 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE
MMBD101W 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE