| 型號: | MMBA811C6 |
| 廠商: | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述: | PNP EPITAXIAL SILICON TRANSISTOR |
| 中文描述: | 進步黨外延硅晶體管 |
| 文件頁數(shù): | 1/1頁 |
| 文件大?。?/td> | 27K |
| 代理商: | MMBA811C6 |

相關PDF資料 |
PDF描述 |
|---|---|
| MMBA811C7 | PNP (DRIVER TRANSISTOR) |
| MMBA811C8 | PNP (DRIVER TRANSISTOR) |
| MMBA812M3 | PNP (GENERAL PURPOSE TRANSISTOR) |
| MMBA812M4 | PNP (GENERAL PURPOSE TRANSISTOR) |
| MMBA812M5 | PNP (GENERAL PURPOSE TRANSISTOR) |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBA811C7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (DRIVER TRANSISTOR) |
| MMBA811C8 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (DRIVER TRANSISTOR) |
| MMBA812M3 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (GENERAL PURPOSE TRANSISTOR) |
| MMBA812M4 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (GENERAL PURPOSE TRANSISTOR) |
| MMBA812M5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PNP (GENERAL PURPOSE TRANSISTOR) |