參數(shù)資料
型號(hào)： MMAD1108R2
廠商： MOTOROLA INC
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 0.4 A, 8 ELEMENT, SILICON, SIGNAL DIODE
封裝： PLASTIC, SO-16
文件頁(yè)數(shù)： 23/34頁(yè)
文件大小： 311K
代理商： MMAD1108R2
MMAD1108
5–98
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TEST PROCEDURE FOR MULTIPLE DIODES
1.0.
REVERSE BIAS TESTING
1.1.
LEAKAGE
Regardless of device configuration type, when testing any
reverse bias condition, the forcing power supply must be ap-
plied only to the uncommon terminal of the pair. As in Figure
1, this would be pins 1 and 14. This can be referred as the
high side of the test circuit. The low side of the test circuit
must be connected to the common terminal of the pair which
in most testers is where the current measurement is taken.
This method is used to eliminate the possibility of degrading
the diode in that pair which is not under test. Diode arrays
with multiple pairs such as the MMAD1103, also have leak-
age paths in the die between common terminals of the pairs.
To isolate the device under test so that the leakage from the
other pairs in the package do not affect the test result, the
leakage current from the common terminals of the pairs not
under test must be shunted to measurement common.
Figure 1 shows the test configuration for both of these cases.
A
VR
14
2
1
+
3
5
7
8
9
11
12
A
2
1
–
3
5
7
8
9
11
12
14
VR
Figure 1
1.2.
BREAKDOWN
It is not recommended to test breakdown on these devices
due to the possibility of degrading the device. Breakdown
may be checked on a curve tracer but extreme caution
should be used.
2.0.
FORWARD BIAS TESTING
Diode arrays are designed with the pairs in parallel; there-
fore, care must be taken to prevent the other diodes in the
array from affecting the measured value of the diode under
test. Figure 2 illustrates the proper technique to measure
only the correct value of the diode under test.
2
1
–
3
5
7
8
9
11
12
IF
Vmeas
14
2
1
+
3
5
7
8
9
11
12
IF
14
Figure 2
Vmeas
2.1.
KELVIN CONNECTION
To achieve the best possible accuracy when testing bias
currents over 10 mA, Kelvin connection to the leads of the
device under test is mandatory. True Kelvin connection dic-
tates that two test connections are made directly to the leads
of the device. One is for power which is the bias supply, and
the other is for sense which is for the measurement circuit.
Kelvin connections are used to eliminate the effects of the
connection resistance between the lead of the device and
the contacts of the test handler and/or hand fixture. Figure 3
is an example of Kelvin connection.
BIAS
MEAS
TEST
HI
TEST
LO
Figure 3
2.2.
PULSE TESTING
When testing bias currents over 10 mA, pulse testing
should be used to minimize thermal drift of the measured val-
ue. The pulse width of a pulse test is approximately 300
s to
380
s.
3.0.
TESTING PROTOCOL
3.1.
TEST TYPES
When testing in sequence all of the electrical characteris-
tics, all reverse bias conditions should be tested before the
forward bias conditions are tested.
3.2.
BIASING MAGNITUDES
Tests of the same test type should be grouped together
with the bias conditions in ascending order. For example:
VF @ 10 mA < 0.6 V
VF @ 50 mA < 0.8 V
VF @ 100 mA < 1 V
VF @ 500 mA < 1.5 V
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