STATIC ELECTRICAL CHARACTERISTICS
鍙冩暩(sh霉)璩囨枡
鍨嬭櫉锛� MM908E622ACEK
寤犲晢锛� Freescale Semiconductor
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鍖呰锛� 绠′欢
渚涙噳(y墨ng)鍟嗚ō(sh猫)鍌欏皝瑁濓細 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
908E622
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SWITCHABLE VDD OUTPUT HVDD
Over-current Shutdown
IHVDDOC
25
35
50
mA
Over-current Shutdown Blanking Time(21)
HVDDT1:0 = 00
HVDDT1:0 = 01
HVDDT1:0 = 10
HVDDT1:0 = 11
tHVDDOCB
鈥�
950
536
234
78
鈥�
s
Over-current Flag Delay(21)
tHVDDOCFD
鈥�0.5
鈥�
ms
Dropout Voltage @ ILOAD = 20 mA
VHVDDDROP
鈥�110
300
mV
VSUP DOWN SCALER(22)
Voltage Ratio (RATIO VSUP = VSUP / VADOUT)
RATIOVSUP
4.75
5.0
5.25
鈥�
INTERNAL DIE TEMPERATURE SENSOR(22)
Voltage / Temperature Slope(21)
STtoV
鈥�26
鈥�
mV/掳C
Output Voltage @ 25 掳C
VT25
1.7
1.9
2.1
V
HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE (H0MS = 0)
Input Voltage Low Threshold
VLT
鈥撯€�
1.5
V
Input Voltage High Threshold
VHT
3.5
鈥�
V
Input Voltage Hysteresis
VHH
100
鈥�
500
mV
Pullup resistor
RPH
7.0
10
13
k
惟
HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE (H0MS = 1)
Output Voltage
VSUP < 17 V
VSUP >17 V
VHALL1
VHALL2
鈥�
VSUP-1.2
鈥�
15.8
V
Output Drop @ IOUT = 15 mA
VH0D
鈥撯€�
2.5
V
Sense Current Threshold
IHSCT
6.0
7.9
10
mA
Sense Current Hysteresis
IHSCH
650
1100
1650
A
Sense Current Limitation
VHSCLIM
20
40
70
mA
Notes
21.
This parameter is guaranteed by process monitoring but is not production tested.
22.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V 鈮� VSUP 鈮� 16 V, -40 掳C 鈮� TJ 鈮� 125 掳C, unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25 掳C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
鐩搁棞(gu膩n)PDF璩囨枡
PDF鎻忚堪
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