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參數資料
| 型號： | MM58274CN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | XO, clock |
| 英文描述： | Microprocessor Compatible Real Time Clock |
| 中文描述： | 0 TIMER(S), REAL TIME CLOCK, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-16 |
| 文件頁數： | 2/16頁 |
| 文件大小： | 228K |
| 代理商： | MM58274CN |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
DC Input or Output Voltage
b
0.3V to V
DD
a
0.3V
DC Input or Output Diode Current
g
5.0 mA
Storage Temperature, T
STG
Supply Voltage, V
DD
Power Dissipation, P
D
Lead Temperature
(Soldering, 10 seconds)
b
65
§
C to
a
150
§
C
6.5V
500 mW
260
§
Operating Conditions
Min
4.5
2.2
0
b
40
Max
5.5
5.5
V
DD
85
Units
V
V
V
§
C
Operating Supply Voltage
Standby Mode Supply Voltage
DC Input or Output Voltage
Operating Temperature Range
Electrical Characteristics
V
DD
e
5V
g
10%, T
e b
40
§
C to
a
85
§
C unless otherwise stated.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
IH
High Level Input
Voltage (except
XTAL IN)
2.0
V
V
IL
Low Level Input
Voltage (except
XTAL IN)
0.8
V
V
OH
High Level Output
Voltage (DB0–DB3)
I
OH
e b
20
m
A
I
OH
e b
1.6 mA
V
DD
b
0.1
3.7
V
V
V
OH
High Level Output
Voltage (INT)
I
OH
e b
20
m
A
(In Test Mode)
V
DD
b
0.1
V
V
OL
Low Level Output
Voltage (DB0–DB3,
INT)
I
OL
e
20
m
A
i
OL
e
1.6 mA
0.1
0.4
V
V
I
IL
Low Level Input Current
(AD0–AD3, DB0–DB3)
V
IN
e
V
SS
(Note 2)
b
5
b
80
m
A
I
IL
Low Level Input Current
(WR, RD)
V
IN
e
V
SS
(Note 2)
b
5
b
190
m
A
I
IL
Low Level Input Current
(CS)
V
IN
e
V
SS
(Note 2)
b
5
b
550
m
A
I
OZH
Ouput High Level
Leakage Current (INT)
V
OUT
e
V
DD
2.0
m
A
I
DD
Average Supply Current
All V
IN
e
V
CC
or Open Circuit
V
DD
e
2.2V (Standby Mode)
V
DD
e
5.0V (Active Mode)
4
10
1
m
A
mA
C
IN
Input Capacitance
5
10
pF
C
OUT
Output Capacitance
(Outputs Disabled)
10
pF
Note 1:
Absolute Maximum Ratings are those values beyond which damage to the device may occur. All voltages referenced to ground unless otherwise noted.
Note 2:
The DB0–DB3 and AD0–AD3 lines all have active P-channel pull-up transistors which will source current. The CS, RD, and WR lines have internal pull-up
resistors to V
DD
.
2
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