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參數(shù)資料
| 型號(hào)： | MM4150 |
| 廠(chǎng)商： | RECTRON LTD |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1N4150 mini-MELF SIGNAL DIODE |
| 中文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, MINIMELF, LL-34, 2 PIN |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | MM4150 |
F
L
L
E
M
-
m
Dimensions in millimeters
2 Places
3.40
3.20
1.40
1.30
0.4
0.2
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296
www.rectron.com
SEMICONDUCTOR
TECHNICAL SPECIFICATION
MM4150
RECTRON
1N4150 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25
°
C)
Items
Reverse Voltage
Reverse Recovery
Time
Power Dissipation
Symbol
VR
trr
Ratings
50
4
Unit
V
ns
P
tot
500
mW
Forward Current
Junction Temp.
Storage Temp.
IF
Tj
200
mA
°
C
°
C
-65 to 200
-65 to 200
Tstg
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
M
ini MELF
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Electrical Characteristics (Ta=25
°
C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Symbol
BV
Ratings
75
Unit
V
IFsurge
500
mA
VF
1.0
V
IR
100
nA
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Maximum Thermal Resistance
Cj
4
pF
trr
4
ns
R
θ
JA
0.35
°
C/mW
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