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參數(shù)資料
| 型號： | MM1180 |
| 廠商： | MITSUMI ELECTRIC |
| 英文描述： | Low-Noise, Low-Satulation Three-Pin Regulator |
| 中文描述： | 低噪聲，低Satulation三針調(diào)節(jié)器 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 104K |
| 代理商： | MM1180 |
MITSUMI
Low-Noise, Low-Satulation Three-Pin Regulator MM1180, 1181
Characteristics
(MM1180G)
Output current (mA)
0
20
40
60
80
100
0.1
0.2
0.3
0.4
V
IN
=4.8V
I
Input voltage (V)
0
2
4
6
8
10
12
14
16
400
300
200
100
500
I
O
=0mA
N
μ
A
Input / output voltage difference
Output voltage temperature characteristic
Allowable loss
Output voltage characteristic
Line regulation
No-load input current
Temperature (
°
C)
-
50
0
50
100
150
5.0
4.9
4.8
V
IN
=6V, I
O
=40mA
O
MMP-4A board mounted
50 75 1 (mm)
Phenol board
Temperature (
°
C)
0
25
50
75
100
125
100
200
300
400
500
-
25
TO-92A
MMP-4A
A
Input voltage (V)
0
2
4
6
8
10
12
14
16
8
6
4
2
10
I
O
=40mA
O
Input voltage (V)
0
2
4
6
8
10
12
14
16
2
1
0
V
IN
=6V, I
O
=40mA
-
1
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MM118-06 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
| MM118-06F | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
| MM118-06L | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
| MM1181 | 制造商:MITSUMI 制造商全稱:Mitsumi Electronics, Corp. 功能描述:Low-Noise, Low-Satulation Three-Pin Regulator |
| MM118-12 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
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