參數(shù)資料
型號： MM118-12
廠商： MICROSEMI CORP
元件分類： 功率晶體管
英文描述： 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
中文描述： 52 A, 1200 V, N-CHANNEL IGBT
封裝： HERMETIC SEALED, POWER MODULE-16
文件頁數(shù)： 2/3頁
文件大?。?/td> 116K
代理商： MM118-12
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
SYMBOL
BV
CES
CONDITIONS
PART
MM118-06
MM118-12
MM118-06F
MM118-06L
MM118-12
(ALL)
MIN
600
1200
2.5
4
4.5
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
C
= 250
μ
A
V
GE(th)
V
CE
= V
GE
, I
C
= 250
μ
A
V
CE
= V
GE
, I
C
= 2.5 mA
V
CE
= V
GE
, I
C
= 350
μ
A
V
GE
=
±
20V
DC
, V
CE
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
CE
=0.8
BV
CES
T
J
= 25
°
C
V
GE
= 0 V T
J
= 125
°
C
V
GE
= 15V, I
C
= 30A T
J
= 25
°
C
I
C
= 60A T
J
= 25
°
C
I
C
= 30A T
J
= 125
°
C
I
C
= 30A T
J
= 25
°
C
V
GE
= 15V, I
C
= 25A T
J
= 25
°
C
I
C
= 50A T
J
= 25
°
C
I
C
= 25A T
J
= 125
°
C
V
CE
≥
10 V; I
C
= 30 A
V
CE
≥
10 V; I
C
= 30 A
4
5.5
5.0
7
6.5
±
100
±
200
200
1000
2.9
tbd
tbd
2.5
3.2
tbd
3.9
V
Gate-to-Emitter Leakage Current
I
GES
nA
Collector-to-Emitter Leakage Current
(Zero Gate Voltage Collector Current)
Collector-to-Emitter Saturation Voltage
(1)
I
CES
(ALL)
μ
A
V
CE(sat)
MM118-06F
MM118-06F
MM118-06F
MM018-06L
MM118-12
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
2.2
3.5
2.2
2.2
2.7
3.4
3.3
20
13
20
2500
2760
1650
230
240
250
70
51
110
V
Forward Transconductance (1)
g
fs
15
7
8.5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ies
C
oes
C
res
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
tbd
tbd
2200
tbd
tbd
380
tbd
tbd
160
pF
INDUCTIVE LOAD, Tj= 25
°
C
(2,3)
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
V
GE
= 15 V, L= 100
μ
H note 2, 3
for MM118-06: V
CE
= 480 V,
I
= 30 A, R
G
= 4.7
for MM118-12: V
CE
= 600 V,
I
C
= 25 A, R
G
= 47
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
25
60
75
30
130
65
3.6
175
400
420
125
400
45
1.3
5
2.4
tbd
tbd
110
tbd
tbd
100
-
tbd
tbd
560
175
tbd
60
-
-
-
ns
ns
ns
ns
ns
ns
mJ
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
Electrical Parameters, per switch @ 25
°
C (unless otherwise specified)
MM-XX SERIES
DESCRIPTION
SYMBOL
MM118-06
MM118-12
Short Circuit Reverse Current (RBSOA)
@ Tj= 125
°
C, V
CE
= 0.8 x V
CES
Junction and Storage Temperature Range (
°
C)
Continuous Source Current (parallel Diode)
Pulse Source Current (parallel Diode)
I
max
T
j,
T
stg
I
S
I
SM
64 A
66 A
-55 to +150
60 A
100 A
-55 to +150
50 A
100 A
Maximum Ratings @ 25
°
C (unless otherwise specified) - continued
Datasheet# MSC0321A
相關PDF資料
PDF描述
MM118-XX 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
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