參數(shù)資料
型號(hào)： MM018-06L
廠(chǎng)商： Microsemi Corporation
元件分類(lèi)： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; Number of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Straight Plug
中文描述： 3相N溝道絕緣柵雙極晶體管IGBT橋
文件頁(yè)數(shù)： 3/3頁(yè)
文件大小： 116K
代理商： MM018-06L
INDUCTIVE LOAD, Tj= 125
°
C
(2,3)
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
V
GE
= 15 V, L= 100
μ
H note 2, 3
for MM118-06: V
CE
= 480 V,
I
C
= 30 A, R
G
= 4.7
for MM118-12: V
CE
= 600 V,
I
C
= 25 A, R
G
= 47
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06F
MM118-06L
MM118-12
MM118-06
MM118-06
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
MM118-06
MM118-06
MM118-12
MM118-12
25
60
95
35
130
90
1
4.2
10
250
540
420
260
600
45
4
12
4.2
125
110
160
23
34
20
50
47
75
-
1.7
1.9
-
2.4
2
-
140
-
60
160
320
tbd
800
3
4.2
tbd
22
tbd
tbd
tbd
tbd
tbd
tbd
-
-
-
tbd
1000
tbd
tbd
1500
tbd
-
-
-
150
150
tbd
35
45
tbd
75
63
tbd
1.5
-
-
1.3
3
-
100
-
tbd
-
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
nC
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Q
g
Q
ge
Q
gc
V
GE
= 15 V,
for MM118-06: V
CE
= 300V, I
C
= 30 A
for MM118-12: V
CE
= 600 V, I
C
= 25 A
Antiparallel diode forward voltage (1)
V
F
I
E
= 15 A T
J
= 25
°
C
I
E
= 30 A T
J
= 25
°
C
I
E
= 50 A T
J
= 25
°
C
I
E
= 15 A T
J
= 150
°
C
I
E
= 10 A T
J
= 25
°
C
I
E
= 10 A T
J
= 100
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 125
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 125
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 125
°
C
V
Antiparallel diode reverse recovery time
t
rr
ns
Antiparallel diode reverse recovery charge
Q
rr
nC
Antiparallel diode peak recovery current
I
RM
A
Notes
(1) Pulse test, t
￡
300
m
s, duty cycle
d
￡
2%
(2) switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi does not manufacture the igbt die; contact Microsemi for details.
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