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參數(shù)資料
| 型號： | MLP1N06CL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | VOLTAGE CLAMPED CURRENT LIMITING MOSFET |
| 中文描述： | 59 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 136K |
| 代理商： | MLP1N06CL |
1
Motorola TMOS Power MOSFET Transistor Device Data
SMARTDISCRETES
Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET
These SMARTDISCRETES devices feature current limiting for short circuit
protection, an integral gate–to–source clamp for ESD protection and gate–to–drain
clamp for over–voltage protection. No additional gate series resistance is required
when interfacing to the output of a MCU, but a 40 k
gate pulldown resistor is
recommended to avoid a floating gate condition.
The internal gate–to–source and gate–to–drain clamps allow the devices to be
applied without use of external transient suppression components. The gate–to–
source clamp protects the MOSFET input from electrostatic gate voltage stresses
up to 2.0 kV. The gate–to–drain clamp protects the MOSFET drain from drain
avalanche stresses that occur with inductive loads. This unique design provides
voltage clamping that is essentially independent of operating temperature.
The MLP1N06CL is fabricated using Motorola’s SMARTDISCRETES technolo-
gy which combines the advantages of a power MOSFET output device with
on–chip protective circuitry. This approach offers an economical means for
providing additional functions that protect a power MOSFET in harsh automotive
and industrial environments. SMARTDISCRETES devices are specified over a
wide temperature range from –50
°
C to 150
°
C.
Temperature Compensated Gate–to–Drain Clamp Limits Voltage Stress
Applied to the Device and Protects the Load From Overvoltage
Integrated ESD Diode Protection
Controlled Switching Minimizes RFI
Low Threshold Voltage Enables Interfacing Power Loads to Microprocessors
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
ID
IDM
Clamped
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Clamped
Vdc
±
10
Vdc
Drain Current — Continuous
Drain Current
— Single Pulse
Self–limited
1.8
Adc
Total Power Dissipation
PD
ESD
40
Watts
Electrostatic Discharge Voltage (Human Body Model)
2.0
kV
Operating and Storage Junction Temperature Range
TJ, Tstg
–50 to 150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
θ
JC
R
θ
JA
TL
3.12
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes,
1/8
″
from case
260
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
(Starting TJ = 25
°
C, ID = 2.0 A, L = 40 mH) (Figure 6)
EAS
80
mJ
SMARTDISCRETES is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MLP1N06CL/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
CASE 221A–06, Style 5
TO–220AB
G
D
S
D
G
S
R1
R2
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