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參數資料
| 型號： | ML9266MRG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Step-up DC/DC converter |
| 中文描述： | 升壓型DC / DC轉換器 |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 112K |
| 代理商： | ML9266MRG |
■
Applications
■
Application Note
●
High Current Application
●
Output Voltage Setting
Referring to application circuits, the output voltage of the
switching regulator (V
OUT
) can be set
R1
R2
●
Feedback Loop Design
Referring to application circuits, The selection of R1and
◆
Follow Equation A
◆
=1.25V/R2), however resistors beyond 5M
are not
recommended.
Lower R gives better noise immunity, and is less
◆
●
High Voltage Application
leakage, and improper probing to FB pins.
◆
to hundreds K
.
●
Multi-Output Applications
feedback needed. Such "high impedance loops" are
sensitive to any interference, which require careful
layout and avoid any interference, e.g. probing to FB pin.
suspend modes, the higher values of R1and R2 are
R1 can improve the noise immunity of the feedback
loops, especially in an improper layout. An empirical
suggestion is around 0~33pF for feedback resistors
of M
, and 10nF~0.1
μ
F for feedback resistors of tens
For applications without standby or suspend modes,
lower values of R1 and R2 are preferred. For applications
concerning
the
current
consumption
in
standby or
sensitive to interference, layout parasitics, FB node
A proper value of feed forward capacitor parallel with
R2 based on the trade-off between quiescent current
consumption and interference immunity is stated below:
Higher R reduces the quiescent current (Path current
V
OUT1
= (1 +
) × 1.25V
A
ML9266
IPCore
CE
EXT
VDD
ML9266
GND
FB
LX
L1
3.3--10uH
C2
1uF
C5
100uF
D1
C1
100uF
1N5819
Vin
Q1
NMOS
Vout
3.3V/5V
R1
1.6M/3M
R2
980k/1M
+
+
CE
EXT
VDD
ML9266
GND
FB
LX
L1
4.7uH
R1
R2
C2
C1
C3
CVDD
C4
100uF
D1
RVDD
100
RM
12V / 9V
300mA
Vin=3.1V
～
5V Vout=12V
Vin=2.8V
～
5V Vout=9V
+
1N5819
+
Q1
NMOS
CVDD=1uF
RM=0.22
C3=0.1uF
R1=860K/620K
R2=100K
C1=100uF
C2=1uF
R2=100
C6=0.1uF
R1=620K
CE
EXT
VDD
ML9266
GND
FB
LX
L1
3.3--10uH
C3
10uF
C1
1uF
D1
C4
10uF
1N5819
Vin
3.3V/5V
Vout2
+18V 10mA
R1
R3
100
C2
10uF
Q1
NMOS
C5
10uF
R2
C6
C7
1uF
C8
1uF
Vout1
+9V 100mA
Vout3
-9V 10mA
P4 / 5
Rev. C, Sep 2005
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