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Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1
μ
s
ML1XX2 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
ML1012R, ML1412R, ML120G2
DESCRIPTION
High Power: 30mW (CW), 50mW (pulse)
Visible Light: 685nm (typ)
FEATURES
ABSOLUTE MAXIMUM RATINGS
Symbol
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25
°
C)
Optical disc drive (High Density / High Speed)
APPLICATION
MITSUBISHI
ELECTRIC
Note3: RL=the load resistance of photodiode for ML1012R and ML1412R
IFD
Forward current (Photodiode)
-
10
mA
Parameter
Conditions
CW
Pulse(Note 2)
Ratings
Unit
Po
Light output power
35
mW
50
2
30
VRL
VRD
Reverse voltage (laser diode)
Reverse voltage (Photodiode)
-
-
V
V
Tc
Case temperature
-
-10~ +60
Tstg
Storage temperature
-
-40~ +100
as of February '00
(Note 1)
ML1XX2 is a high power AlGaInP semiconductor laser
which provides a stable, single transverse mode
oscillation with emission wavelength of 685-nm and
standard CW light output of 30mW.
ML1XX2 has a window-mirror-facet which improves
the maximum output power. That leads to highly
reliable and high-power operation.
°
C
°
C
mA
Symbol
Parameter
Test conditions
Min.
Typ.
35
80
Max
60
120
Unit
Ith
Iop
Vop
η
Threshold current
Operation current
CW
CW,Po=30mW
CW,Po=30mW
-
-
mA
mA
V
Slope efficiency
CW,Po=30mW
-
0.8
-
mW/mA
Peak wavelength
Beam divergence angle
(parallel)
CW,Po=30mW
685
nm
CW,Po=30mW
10
°
Beam divergence angle
(perpendicular)
CW,Po=30mW
20
°
Im
Monitoring output current
(Photodiode)
CW,Po=30mW
VRD=1V RL=10
(Note 3)
VRD=10V
VRD=5V
0.3
ID
Ct
Dark current (Photodiode)
Capacitance (Photodiode)
-
7
0.5
-
uA
pF
-
Operating voltage
2.4
3.0
2.0
700
670
12
7
25
16
0
0.05
1.5
θ
//
λ
p
θ
⊥