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參數(shù)資料
| 型號(hào)： | MKP3V130 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 晶閘管 |
| 英文描述： | SIDACs 1 AMPERE RMS 100 thru 135 VOLTS |
| 中文描述： | 140 V, SIDAC |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 85K |
| 代理商： | MKP3V130 |
3
Motorola Thyristor Device Data
THERMAL CHARACTERISTICS
Figure 5. Thermal Response
Figure 6. Breakover Current
Figure 7. Holding Current
TYPICAL CHARACTERISTICS
Figure 8. V-1 Characteristics
2.0 k
5.0 k
500
1.0 k
10 k
20 k
20
200
100
50
10
5.0
0.05
0.1
0.2
0.3
0.5
2.0
0.03
0.02
0.5
1.0
0.01
1.0
TJ, JUNCTION TEMPERATURE (
°
C)
10
20
30
40
50
60
70
80
90
100
140
120
100
80
60
40
20
–20
–40
–60
25
0
50
75
100
125
150
175
200
225
250
140
120
100
80
60
40
20
–20
–40
–60
I(BO)
t, TIME (ms)
0.2
0
TJ, JUNCTION TEMPERATURE (
°
C)
0
0
V(BO)
VDRM
IDRM
VS
IS
Slope = RS
VTM
ITM
IH
The temperature of the lead should be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is nor-
mally large enough so that it will not significantly respond to
heat surges generated in the diode as a result of pulsed op-
eration once steady-state conditions are achieved. Using the
measured value of TL, the junction temperature may be de-
termined by:
TJ = TL +
TJL
r
R
RS
(
V(BO)
(
IS
VS
)
I(BO)
)
I
(
μ
I
H
LEAD LENGTH = 1/4
″
Z
θ
JL(t) = R
θ
JL
r(t)
TJL = Ppk R
θ
JL[r(t)]
where:
TJL = the increase in junction temperature above the lead
temperature
r(t) = normalized value of transient thermal resistance at time,
t from this figure. For example,
r(tp) = normalized value of
transient resistance at time tp.
tp
TIME
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