參數(shù)資料
型號: MKI75-06A7
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Short Circuit SOA Capability Square RBSOA
中文描述: 90 A, 600 V, N-CHANNEL IGBT
文件頁數(shù): 2/4頁
文件大?。?/td> 127K
代理商: MKI75-06A7
2002 IXYS All rights reserved
2 - 4
B3
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
140
85
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 75 A; V
GE
= 0 V; T
VJ
= 25°C
1.8
1.3
2.1
V
V
T
VJ
= 125°C
I
RM
t
rr
I
F
= 60 A; di
/dt = -500 A/μs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
28
100
A
ns
R
thJC
(per diode)
0.61 K/W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.95 V; R
0
= 20 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.014 V; R
0
= 4 m
Thermal Response
IGBT (typ.)
C
th1
= 0.248 J/K; R
th1
= 0.343 K/W
C
th2
= 1.849 J/K; R
th2
= 0.097 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.23 J/K; R
th1
= 0.483 K/W
C
th2
= 1.3 J/K; R
th2
= 0.127 K/W
MKI 75-06 A7
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
stg
-40...+150
-40...+125
°
C
°
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
5
m
d
S
d
A
Creepage distance on surface
Strike distance in air
6
6
mm
mm
R
thCH
with heatsink compound
0.02
K/W
Weight
180
g
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