參數(shù)資料
型號(hào)： MJW21194
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Silicon Power Transistors
中文描述： 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝： CASE 340L-02, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 75K
代理商： MJW21194
MJW21193 (PNP) MJW21194 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
–
–
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
–
–
100
μ
Adc
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
–
–
100
μ
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
–
–
100
μ
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non–repetitive)
(VCE = 80 Vdc, t = 1 s (non–repetitive)
IS/b
4.0
2.25
–
–
–
–
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
20
8
–
–
60
–
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
–
–
2.2
Vdc
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
–
–
–
–
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
hFE
matched
(Matched pair hFE = 50 @ 5 A/5 V)
THD
–
–
0.8
0.08
–
–
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
–
–
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
–
–
500
pF
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
T
PNP MJW21193
f
T
NPN MJW21194
IC COLLECTOR CURRENT (AMPS)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
1.0
10
0.1
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0
0.1
1.0
10
1.0
VCE = 10 V
5 V
TJ = 25
°
C
ftest = 1 MHz
10 V
VCE = 5 V
TJ = 25
°
C
ftest = 1 MHz
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