參數資料
型號： MJL16218
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： POWER TRANSISTOR 15 AMPERES 1500 VOLTS - VCES 170 WATTS
中文描述： 15 A, 650 V, NPN, Si, POWER TRANSISTOR, TO-3PBL
封裝： TO-3PBL, 3 PIN
文件頁數： 1/8頁
文件大?。?/td> 157K
代理商： MJL16218
1
Motorola Bipolar Power Transistor Device Data
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJL16218 is a state–of–the–art SWITCHMODE
bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very high resolution, full page, monochrome monitors.
1500 Volt Collector–Emitter Breakdown Capability
Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
Application Specific State–of–the–Art Die Design
Fast Switching:
175 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
Low Saturation Voltage:
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive
Low Collector–Emitter Leakage Current — 250
μ
A Max at 1500 Volts — VCES
High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 Volts (Min)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Breakdown Voltage
Collector–Emitter Sustaining Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Pulsed (1)
VCES
VCEO(sus)
VEBO
IC
ICM
IB
IBM
W (BER)
1500
650
8.0
15
20
Vdc
Vdc
Vdc
Adc
Base Current — Continuous
— Pulsed (1)
7.0
14
Adc
Maximum Repetitive Emitter–Base
Avalanche Energy
Total Power Dissipation @ TC = 25
°
C
0.2
mJ
@ TC = 100
°
C
Derated above TC = 25
°
C
Operating and Storage Temperature Range
PD
170
39
1.49
Watts
W/
°
C
°
C
TJ, Tstg
– 55 to 125
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°
C/W
°
C
Thermal Resistance — Junction to Case
Lead Temperature for Soldering Purposes
1/8
″
from the case for 5 seconds
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
(2) Proper strike and creepage distance must be provided.
R
θ
JC
TL
0.67
275
Designer’s and SCANSWITCH are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL16218/D
POWER TRANSISTOR
15 AMPERES
1500 VOLTS — VCES
170 WATTS
*Motorola Preferred Device
CASE 340G–02, STYLE 2
TO–3PBL
相關PDF資料
PDF描述
MJL16218 POWER TRANSISTOR
MJL21193 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
MJL21193 COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194 COMPLEMENTARY SILICON POWER TRANSISTORS
MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS
相關代理商/技術參數
參數描述
MJL21193 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL21193_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJL21193_10 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors
MJL21193G 功能描述:兩極晶體管 - BJT 16A 250V 200W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJL21194 功能描述:兩極晶體管 - BJT 16A 250V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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