參數(shù)資料
型號(hào): MJE802
廠商: 意法半導(dǎo)體
英文描述: SILICON NPN POWER DARLINGTON TRANSISTORS
中文描述: 硅NPN電源達(dá)林頓晶體管
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 256K
代理商: MJE802
1
Motorola Bipolar Power Transistor Device Data
! !
!# "
!
. . . designed for general–purpose amplifier and low–speed switching applications.
High DC Current Gain —
hFE = 2000 (Typ) @ IC = 2.0 Adc
Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage
Multiplication
Choice of Packages —
MJE700,T
MJE802
MJE803
Derate above 25 C
0.32
0.40
W/ C
Operating and Storage Junction
Temperature Range
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θ
JC
Max
Unit
C/W
TO–220
2.50
25
TC, CASE TEMPERATURE (
°
C)
Figure 1. Power Derating
0
50
125
150
30
P
TO–220AB
40
20
10
75
100
TO–126
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE700/D
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
40 WATT
50 WATT
CASE 77–08
TO–225AA TYPE
MJE700–703
MJE800–803
CASE 221A–06
TO–220AB
MJE700T
MJE800T
REV 3
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