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參數(shù)資料
| 型號(hào)： | MJE703 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | NPN (HIGH DC CURRENT GAIN) |
| 中文描述： | npn型（高直流電流增益） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 256K |
| 代理商： | MJE703 |
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.7
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1.0
2.0
5.0
10
20
50
100
200
1000
500
θ
JC(t) = r(t)
θ
JC
θ
JC = 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
SINGLE PULSE
0.1
0.3
0.03
0.02
0.1
0.5
0.2
Figure 5. Thermal Response (MJE700, 800 Series)
0.03
3.0
30
300
0.3
(
10
7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
100
2.0
5.0
0.5
Figure 6. MJE700 Series
MJE702, 703
MJE700
dc
1.0
0.7
3.0
1.0 ms
70
50
30
20
10
7.0
5.0
100
μ
s
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
Figure 7. MJE800 Series
I
100
70
50
30
20
10
7.0
5.0
0.2
0.3
10
7.0
2.0
5.0
0.5
1.0
0.7
3.0
0.2
0.3
5.0 ms
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
MJE802, 803
MJE800
ACTIVE–REGION SAFE–OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 6 and 7 are based on TJ(pk) = 150 C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4
or 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
1.0
5.0
0.2
Figure 8. MJE700T
0.5
2.0
5.0
I
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
Figure 9. MJE800T
I
100
70
50
30
20
10
7.0
5.0
100
70
50
30
20
10
7.0
10
1.0
5.0
0.2
0.5
2.0
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
100
μ
s
1.0 ms
5.0 ms
dc
TJ = 150
°
C
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
°
C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE802 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE800T | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE702 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE703 | DARLINGTON POWER TRANSISTORS COMPLEMENTARY |
| MJE800T | 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE703G | 功能描述:達(dá)林頓晶體管 4A 80V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE703STU | 功能描述:達(dá)林頓晶體管 PNP Si Transistor Epitaxial Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJE703T | 制造商:MOSPEC 制造商全稱:Mospec Semiconductor 功能描述:POWER TRANSISTORS(4.0A,60-80V,40W) |
| MJE710 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MJE710_08 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
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