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參數(shù)資料
| 型號： | MJE5852BV |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 45/63頁 |
| 文件大?。?/td> | 445K |
| 代理商： | MJE5852BV |
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MJE5850 MJE5851 MJE5852
3–648
Motorola Bipolar Power Transistor Device Data
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time,10% VCEM to 10% ICM
An enlarged portion of the inductive switching waveform is
shown in Figure 7 to aid on the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222A:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
°C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
t,TIME
(
s)
t, TIME (ms)
1
0.01
0.7
0.2
0.1
0.05
0.02
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
0.05
1
2
5
10
20
50
100
200
500
Z
θJC(t) = r(t) RθJC
R
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.01
SINGLE PULSE
0.1
0.5
0.2
(NORMALIZED)
1 k
0.5
0.3
0.07
0.03
0.02
IC, COLLECTOR CURRENT (AMPS)
tr
Figure 9. Turn–On Switching Times
Figure 10. Turn–Off Switching Time
0.1
0.3
0.2
10
0.4
Figure 11. Typical Thermal Response [Z
θJC(t)]
0.02
0.01
1.0
0.7
0.3
0.2
0.5
0.1
IC, COLLECTOR CURRENT (AMPS)
0.7
3.0
10
2.0
5.0
0.1
1.0
7.0
VCC = 250 V
IC/IB = 4
TJ = 25°C
0.5
0.03
0.05
0.07
0.7
VCC = 250 V
IC/IB = 4
VBE(off) = 5 V
TJ = 25°C
0.3
0.2
0.7
4.0
10
0.1
2.0
7.0
0.5
0.3
1.0
t,TIME
(
s)
td
ts
tf
0.02
0.05
相關(guān)PDF資料 |
PDF描述 |
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| MJE5852BU | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852BG | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852BD | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AN | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AK | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5852G | 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6041 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6043 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6044 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
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