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參數(shù)資料
| 型號： | MJE5852BU |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 12/63頁 |
| 文件大小： | 445K |
| 代理商： | MJE5852BU |
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MJE5850 MJE5851 MJE5852
3–645
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
MJE5850
(IC = 10 mA, IB = 0)
MJE5851
MJE5852
VCEO(sus)
300
350
400
—
—
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
—
—
0.5
2.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEV, RBE = 50 , TC = 100_C)
ICER
—
—
3.0
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
1.0
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased
IS/b
See Figure 12
Clamped Inductive SOA with base reverse biased
RBSOA
See Figure 13
*ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5 Vdc)
(IC = 5.0 Adc, VCE = 5 Vdc)
hFE
15
5
—
—
—
Collector–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 8.0 Adc, IB = 3.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
—
—
2.0
5.0
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 4.0 Adc, IB = 1.0 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
—
—
1.5
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
Cob
—
270
—
pF
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
td
—
0.025
0.1
s
Rise Time
( CC
C
B1
tp = 50 s, Duty Cycle v 2%)
tr
—
0.100
0.5
s
Storage Time
(VCC = 250 Vdc, IC = 4.0 A, IB1 = 1.0 A,
ts
—
0.60
2.0
s
Fall Time
( CC
C
B1
VBE(off) = 5 Vdc, tp = 50 s, Duty Cycle v 2%)
tf
—
0.11
0.5
s
Inductive Load, Clamped (Table 1)
Storage Time
(I
4 A V
250 V I
1 0 A
tsv
—
0.8
3.0
s
Crossover Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 100_C)
tc
—
0.4
1.5
s
Fall Time
VBE(off) 5 Vdc, TC 100 C)
tfi
—
0.1
—
s
Storage Time
(I
4 A V
250 V I
1 0 A
tsv
—
0.5
—
s
Crossover Time
(ICM = 4 A, VCEM = 250 V, IB1 = 1.0 A,
VBE(off) = 5 Vdc, TC = 25_C)
tc
—
0.125
—
s
Fall Time
VBE(off) 5 Vdc, TC 25 C)
tfi
—
0.1
—
s
* Pulse Test: PW = 300
s. Duty Cycle v 2%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE5852BG | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852BD | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AN | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AK | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AJ | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5852G | 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6041 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6043 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6044 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
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