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參數(shù)資料
| 型號(hào)： | MJE5852AN |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 34/63頁(yè) |
| 文件大?。?/td> | 445K |
| 代理商： | MJE5852AN |
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MJE5850 MJE5851 MJE5852
3–647
Motorola Bipolar Power Transistor Device Data
1
INPUT
Rcoil
Lcoil
VCC
Vclamp
RS =
0.1
1N4937
OR
EQUIVALENT
TUT
SEE ABOVE FOR
DETAILED CONDITIONS
20
1
0
PW Varied to Attain
IC = 100 mA
2
–10 V
t1
ICM
tf Clamped
tf
t
Vclamp
t2
TIME
VCEM
1
2
TUT
RL
VCC
t1 Adjusted to
Obtain IC
Test Equipment
Scope — Tektronix
475 or Equivalent
t1 ≈
Lcoil (ICM)
VCC
t2 ≈
Lcoil (ICM)
VClamp
VCEO(sus)
RBSOA AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INPUT
CONDITIONS
CIRCUIT
V
ALUES
TEST
CIRCUITS
– V adjusted to obtain desired IB1
+ V adjusted to obtain desired VBE(off)
+ V
50
2 W
INPUT
0
0.2
F
0.0025
F
0.1
F
500
1/2 W
500
0.0033
F
500
1/2 W
+ V
50
F
0.1
F
MJE15029
1
2
1
2 W
MJE15028
50
F
– V
+–
1/2 W
1N4934
0.1
F
–+
500
1/2 W
0.2
F
IB1 adjusted to
obtain the forced
hFE desired
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
IB1
1
2
TURN–ON TIME
Lcoil = 80 mH, VCC = 10 V
Rcoil = 0.7
Lcoil = 180 H
Rcoil = 0.05
VCC = 20 V
VCC = 250 V
RL = 62
Pulse Width = 10
s
INDUCTIVE TEST CIRCUIT
RESISTIVE TEST CIRCUIT
OUTPUT WAVEFORMS
Vclamp = 250 V
RB adjusted to attain desired IB1
VCE
IC
Table 1. Test Conditions for Dynamic Performance
,CROSSOVER
TIME
(
t c
s)
tti
Figure 7. Inductive Switching Measurements
TIME
IB
VCE
90% IB1
tsr
tc
10%
VCEM
Figure 8. Inductive Switching Times
IC = 4 A
IC/IB = 4
TJ = 25°C
tc 100°C
tsv 100°C
tsv 25°C
tc 25°C
VBE, BASE–EMITTER VOLTAGE (VOLTS)
0
0.4
0.2
1.0
0.6
0.8
36
8
05
7
2
14
tsv
,VOL
TAGE
ST
ORAGE
TIME
(
s)
0
0.9
0.3
2.7
1.5
2.1
1.2
0.6
3.0
1.8
2.4
IC
10%
ICM
2%
ICM
trv
tfi
90%
ICM
VCEM
Vclamp
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE5852AK | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5852AJ | 8 A, 400 V, PNP, Si, POWER TRANSISTOR |
| MJE5851AS | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| MJE5851AN | 8 A, 350 V, PNP, Si, POWER TRANSISTOR |
| MJE5850BD | 8 A, 300 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE5852G | 功能描述:兩極晶體管 - BJT 8A 400V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE6040 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6041 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6043 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
| MJE6044 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:POWER DERATING |
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