參數(shù)資料
型號: MJE5742AS
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 16/61頁
文件大?。?/td> 397K
代理商: MJE5742AS
Surface Mount Package Information and Tape and Reel Specifications
4–6
Motorola Bipolar Power Transistor Device Data
Tape and Reel Specifications
and Packaging Specifications
Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the
shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure
cavity for the product when sealed with the “peel–back” cover tape.
Two Reel Sizes Available (7″ and 13″)
Used for Automatic Pick and Place Feed Systems
Minimizes Product Handling
EIA 481, –1, –2
DPAK SO–14, in 16 mm Tape
D2PAK in 24 mm Tape
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual
reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is
one full reel for each line item, and orders are required to be in increments of the single reel quantity.
OF FEED
D2PAK
DIRECTION
24
mm
16
mm
DPAK
Package
Tape Width
(mm)
Reel Size
(inch)
DPAK
16
8.0
± 0.1 (.315 ± .004)
330
(13)
2,500
T4
D2PAK
24
16.0
± 0.1 (.630 ± .004)
330
(13)
800
T4
相關(guān)PDF資料
PDF描述
MJE5742DW 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE5741AJ 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5741DW 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5852BV 8 A, 400 V, PNP, Si, POWER TRANSISTOR
MJE5852BU 8 A, 400 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5742G 功能描述:達林頓晶體管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE5850 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5850G 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850G 制造商:ON Semiconductor 功能描述:Bipolar Transistor