參數(shù)資料
型號(hào)： MJE5742AN
廠商： ON SEMICONDUCTOR
元件分類(lèi)： 功率晶體管
英文描述： 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù)： 34/61頁(yè)
文件大?。?/td> 397K
代理商： MJE5742AN
MJE5740 MJE5741 MJE5742
3–643
Motorola Bipolar Power Transistor Device Data
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 6 may be found at any case tem-
perature by using the appropriate curve on Figure 1.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Forward Bias Safe Operating Area
Figure 7. Reverse Bias Safe Operating Area
16
14
12
8
0
2
4
10
100
200
300
500
0
400
16
5
10
8
1
0.02
100
I C
,COLLECT
OR
CURRENT
(AMPS)
0.1
10
20
200
400
3
0.5
50
0.3
0.05
dc
1ms
100
s
MJE5742
MJE5741
MJE5740
VBE(off) ≤ 5 V
TJ = 100°C
6
CURVES APPLY BELOW RATED VCEO
10
s
MJE5742
MJE5741
MJE5740
5ms
BONDING WIRE LIMIT
THERMAL LIMIT
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
t,TIME
(
s)
t,TIME
(
s)
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
7
5
2
1
0.7
0.2
0.3
5
0.5
10
3
0.3
0.2
7
IC, COLLECTOR CURRENT (AMPS)
0.5 0.7
1
2
10
0.7
0.5
0.2
0.1
0.07
0.02
0.3
Figure 8. Turn–On Time
5
0.05
1
Figure 9. Turn–Off Time
3
VCC = 250 V
IB1 = IB2
IC/IB = 20
ts
tr
tf
td
VCC = 250 V
IB1 = IB2
IC/IB = 20
0.3
0.03
0.2
7
RESISTIVE SWITCHING PERFORMANCE
相關(guān)PDF資料
PDF描述
MJE5741BC 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5741AU 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5741AN 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5740BV 8 A, 300 V, NPN, Si, POWER TRANSISTOR
MJE5740BU 8 A, 300 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE5742G 功能描述:達(dá)林頓晶體管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE5850 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850_06 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5850G 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850G 制造商:ON Semiconductor 功能描述:Bipolar Transistor
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