參數(shù)資料
型號： MJE5741BA
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 8 A, 350 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 12/61頁
文件大?。?/td> 397K
代理商： MJE5741BA
MJE5740 MJE5741 MJE5742
3–641
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
—
—
Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
—
—
2
3
2.2
Vdc
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base–Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base–Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
—
—
2.5
3.5
2.4
Vdc
Diode Forward Voltage (2) (IF = 5 Adc)
Vf
—
—
2.5
Vdc
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
td
—
0.04
—
s
Rise Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 =IB2 = 0 25 A t = 25 s
tr
—
0.5
—
s
Storage Time
IB1 = IB2 = 0.25 A, tp = 25 s,
Duty Cycle
v 1%)
ts
—
8
—
s
Fall Time
Duty Cycle
v 1%)
tf
—
2
—
s
Inductive Load, Clamped (Table 1)
Voltage Storage Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
tsv
—
4
—
s
Crossover Time
( C( k)
,
CE( k)
IB1 = 0.06 A, VBE(off) = 5 Vdc)
tc
—
2
—
s
(1) Pulse Test: Pulse Width 300
s, Duty Cycle = 2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
(2) Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
V
BE
,BASE–EMITTER
VOL
TAGE
(VOL
TS)
trv
IC
VCE
90% IB1
tsv
IC(pk)
VCE(pk)
90% VCE(pk)
90% IC
10% VCE(pk)
10%
IC(pk) 2% IC
IB
tfi
tti
tc
0.1
IC, COLLECTOR CURRENT (AMPS)
5
2000
h
FE
,DC
CURRENT
GAIN
VCE = 5 V
1
+25
°C
210
1000
100
10
0
TC, CASE TEMPERATURE (°C)
0
40
120
160
60
POWER
DERA
TING
FACT
OR
(%)
SECOND BREAKDOWN DERATING
100
80
40
20
60
100
140
80
THERMAL DERATING
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
IC, COLLECTOR CURRENT (AMPS)
2.4
1.6
0.4
Figure 3. DC Current Gain
Figure 4. Base–Emitter Voltage
2
1.2
0.8
hFE = 20
0.2
10
2
0.5
1
5
TIME
150
°C
–55
°C
20
2.2
1.4
1.8
1
0.6
+150
°C
+25
°C
–55
°C
TYPICAL CHARACTERISTICS
相關PDF資料
PDF描述
MJE5740AF 8 A, 300 V, NPN, Si, POWER TRANSISTOR
MJE5741AF 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5741BG 8 A, 350 V, NPN, Si, POWER TRANSISTOR
MJE5742AK 8 A, 400 V, NPN, Si, POWER TRANSISTOR
MJE5742AS 8 A, 400 V, NPN, Si, POWER TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
MJE5742 功能描述:達林頓晶體管 8A 400V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE5742G 功能描述:達林頓晶體管 8A 400V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJE5850 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE5850_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS
MJE5850G 功能描述:兩極晶體管 - BJT 8A 300V 80W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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