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參數(shù)資料
| 型號(hào)： | MJE521 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS |
| 中文描述： | 4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 128K |
| 代理商： | MJE521 |
2
Motorola Bipolar Power Transistor Device Data
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
30
0.1
0.3
0.2
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
Figure 1. Active–Region Safe Operating Area
5.0 ms
dc
5.0
20
10
5.0
2.0
TJ = 150
°
C
I
1.0
2.0
3.0
40
3.0
1.0 ms
The data of Figure 1 based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided (TJpk)
150 C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
IC, COLLECTOR CURRENT (mA)
h
700
500
1000
3.0 5.0
20
2000
2.0
100
70
50
10
10
50
100
30
25
°
C
TJ = 150
°
C
–55
°
C
Figure 2. DC Current Gain
Figure 3. “On” Voltage
1.5
IC, COLLECTOR CURRENT (mA)
1.2
0.3
0
TJ = 25
°
C
V
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
30
20
0.9
0.6
t, TIME (ms)
0.01
0.01
0.03
1.0
2.0
5.0
10
20
50
100
200
0.1
0.5
0.2
1.0
0.7
0.2
0.1
0.07
0.05
r
θ
JC(t) = r(t)
θ
JC
θ
JC = 5.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
SINGLE PULSE
R
Figure 4. Thermal Response
0.5
D = 0.5
0.05
0.3
0.03
0.02
300
200
200
500
1000
300
VCE = 1.0 V
VCE(sat) @ IC/IB = 10
3.0 5.0
20
2000
2.0
10
50
100
30
200
500 1000
300
0.02
0.05
0.3
3.0
30
500
1000
300
0.1
0.01
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