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參數(shù)資料
| 型號： | MJE4343 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS COMPLEMENTARY SILICON |
| 中文描述： | 16 A, 160 V, NPN, Si, POWER TRANSISTOR, TO-218 |
| 封裝： | CASE 340D-02, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 197K |
| 代理商： | MJE4343 |
4
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
0.01
0.02
0.05
1.0
2.0
5.0
10
20
50
100
2000
0.1
0.5
0.2
1.0
0.2
0.1
0.05
r
θ
JC(t) = r(t)
θ
JC
θ
JC = 1.0
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
R
Figure 9. Thermal Response
0.5
D = 0.5
0.05
0.02
200
500
1000
0.1
0.02
0.01
SINGLE PULSE
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
200
50
1.0
Figure 10. Maximum Forward Bias Safe
Operating Area
5.0 ms
dc
20
150
30
20
10
7.0
5.0
3.0
MJE4342
MJE4352
MJE4343
MJE4353
I
0.2
0.5
2.0
5.0
10
50
70
100
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT TC = 25
°
C
BONDING WIRE LIMITED
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current conditions during re-
verse biased turn–off. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 11 gives RBSOA characteristics.
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TC = 25 C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
≥
25 C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
8.0
Figure 11. Maximum Reverse Bias Safe
Operating Area
16
120
100
80
60
40
20
MJE4342
MJE4352
MJE4343
MJE4353
I
4.0
12
140
160
180
TJ = 100
°
C
VBE(off)
≤
5 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE4343 | 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS |
| MJE4352 | 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS |
| MJE4353 | 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS |
| MJE4342 | POWER TRANSISTORS(16A,100-160V,125W) |
| MJE4343 | POWER TRANSISTORS(16A,100-160V,125W) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE4343_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High?Voltage High Power Transistors |
| MJE4343G | 功能描述:兩極晶體管 - BJT 16A 160V 125W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE4350 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
| MJE4351 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
| MJE4352 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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