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參數(shù)資料
| 型號(hào)： | MJE371 |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS |
| 中文描述： | 4 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-225AA |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 122K |
| 代理商： | MJE371 |
2
Motorola Bipolar Power Transistor Device Data
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.5
40
0.1
0.3
0.2
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25
°
C
Figure 1. Active–Region Safe Operating Area
5.0
20
10
6.0
2.0
TJ = 150
°
C
I
1.0
2.0
3.0
60
4.0
8.0
1.0 ms
dc
100
μ
s
5.0 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150 C; TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.
150 C.
IC, COLLECTOR CURRENT (AMP)
h
7.0
5.0
10
0.02 0.03
0.1
4.0
0.01
1.0
0.7
0.5
0.1
0.05
0.3
0.5
0.2
150
°
C
TJ = 25
°
C
–55
°
C
Figure 2. DC Current Gain
Figure 3. “On” Voltage
2.0
IC, COLLECTOR CURRENT (AMP)
1.6
0.4
0
0.005
TJ = 25
°
C
V
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.3
0.2
1.2
0.8
t, TIME OR PULSE WIDTH (ms)
0.01
0.01
0.03
1.0
2.0
5.0
10
20
50
100
200
0.1
0.5
0.2
1.0
0.7
0.2
0.1
0.07
0.05
r
θ
JC(t) = r(t)
θ
JC
θ
JC = 3.12
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
T
Figure 4. Thermal Response
0.5
D = 0.5
0.1
0.01
0.3
0.03
0.02
3.0
2.0
1.0
3.0
2.0
VCE = 1.0 Vdc
VCE(sat) @ IC/IB = 10
0.01 0.02
0.05
4.0
0.03
0.2 0.3
0.1
0.5
2.0 3.0
1.0
0.02
0.05
0.3
3.0
500
1000
0.02
0.05
0.2
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