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參數(shù)資料
| 型號： | MJE341 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTORS NPN SILICON |
| 中文描述： | 0.5 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-225AA |
| 封裝： | PLASTIC, CASE 77-09, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 130K |
| 代理商： | MJE341 |
1
Motorola Bipolar Power Transistor Device Data
. . . useful for medium voltage applications requiring high fT such as converters and
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
VCEO
VCB
VEB
MJE341
150
175
MJE344
200
200
Unit
Vdc
Vdc
Emitter–Base Voltage
3.0
5.0
Vdc
Collector Current — Continuous
500
mAdc
Base Current
250
mAdc
Total Power Dissipation @ TC = 25 C
PD
IC
IB
20
Watts
I
1.0
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
0.5
0.1
0.05
0.02
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25
°
C
20
40
60
100
300
TJ = 150
°
C
1.0 ms
dc
0.2
30
200
Figure 1. Active Region Safe Operating Area
500
μ
s
ALL
ALL
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion then the curves indicate.
The data of Figure 1 is based on TJ(pk) = 150 C; TC is vari-
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided TJ(pk)
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less then the limitations
imposed by second breakdown.
150 C.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE341/D
0.5 AMPERE
POWER TRANSISTORS
NPN SILICON
150–200 VOLTS
20 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
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| MJE3439 | 功能描述:兩極晶體管 - BJT 0.3A 350V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE3439G | 功能描述:兩極晶體管 - BJT 0.3A 350V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE344 | 功能描述:兩極晶體管 - BJT 0.5A 200V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE344_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic NPN Silicon Medium?Power Transistor |
| MJE3440 | 功能描述:兩極晶體管 - BJT NPN Fast Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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