參數(shù)資料
型號(hào)： MJE2955TJ69Z
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 10000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-220
封裝： TO-220, 3 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 37K
代理商： MJE2955TJ69Z
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE
2955T
PNP Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300s, duty cycle≤2% Pulse
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 70
V
VCEO
Collector-Emitter Voltage
- 60
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current
- 10
A
IB
Base Current
- 6
A
PC
Collector Dissipation (TC=25°C)
75
W
PC
Collector Dissipation (Ta=25°C)
0.6
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
BVCEO
Collector- Emitter Breakdown Voltage
IC= - 200mA, IB = 0
-60
V
ICEO
Collector Cut-off Current
VCE = - 30V, IB = 0
-700
A
ICEX1
Collector Cut-off Current
VCE = - 70V, VBE(off) = 1.5V
-1
mA
ICEX2
Collector Cut-off Current
VCE = - 70V, VBE(off) = 1.5V
@ TC = 150°C
-5
mA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
-5
mA
hFE
* DC Current Gain
VCE = - 4V, IC = - 4A
VCE = - 4V, IC = - 10A
20
5
100
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 4A, IB = - 0.4A
IC = - 10A, IB = - 3.3A
-1.1
-8
V
VBE (on)
* Base-Emitter ON Voltage
VCE = - 4V, IC = - 4A
-1.8
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 500mA
2
MHz
MJE2955T
General Purpose and Switching Applications
DC Current Gain Specified to IC = 10 A
High Current Gain Bandwidth Product : fT = 2MHz (Min.)
1.Base
2.Collector
3.Emitter
1
TO-220
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