參數(shù)資料
型號: MJE2955TBA
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 60 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 55/59頁
文件大小: 357K
代理商: MJE2955TBA
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–31
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
TIP73B
2N6488
3–132
TIP74
2N6490
3–132
TIP74A
2N6490
3–132
TIP74B
2N6491
3–132
TIP75
MJE13005
3–661
TIP75A
MJE13005
3–661
TIP75B
MJE13005
3–661
TIP75C
MJE13005
3–661
TIPL752
MJE16106
3–696
TIPL752A
MJE16106
3–696
TIPL753
MJE16106
3–696
TIPL753A
MJE16106
3–696
TIPL755
MJ16110
3–529
TIPL755A
MJ16010
3–512
TIPL760
MJE16002
3–688
TIPL760A
MJE16002
3–688
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE2955TD127 制造商:Motorola Inc 功能描述:
MJE2955TG 功能描述:兩極晶體管 - BJT 10A 60V 125W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE2955TG-TN3-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE TRANSISTOR
MJE2955TTU 功能描述:兩極晶體管 - BJT PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE2955TTU_Q 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2