| 型號(hào): | MJE243 |
| 廠商: | SEMICONDUCTOR TECHNOLOGY INC |
| 元件分類: | 功率晶體管 |
| 英文描述: | 4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝: | TO-126, 3 PIN |
| 文件頁(yè)數(shù): | 1/1頁(yè) |
| 文件大小: | 96K |
| 代理商: | MJE243 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE251 | 4 A, 80 V, PNP, Si, POWER TRANSISTOR |
| MJE253 | 4 A, 100 V, PNP, Si, POWER TRANSISTOR |
| MJE2801 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| MJE2801 | 10 A, 60 V, NPN, Si, POWER TRANSISTOR |
| MJE2901 | 10 A, 60 V, PNP, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE243_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS |
| MJE243_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors |
| MJE243G | 功能描述:兩極晶體管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE243G | 制造商:ON Semiconductor 功能描述:RF Bipolar Transistor |
| MJE244 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |