| 型號: | MJE2361T |
| 廠商: | CENTRAL SEMICONDUCTOR CORP |
| 元件分類: | 功率晶體管 |
| 英文描述: | 0.5 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝: | TO-220, 3 PIN |
| 文件頁數(shù): | 1/2頁 |
| 文件大?。?/td> | 80K |
| 代理商: | MJE2361T |

相關PDF資料 |
PDF描述 |
|---|---|
| MJE240LEADFREE | 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE801LEADFREE | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| MJE234LEADFREE | 4 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| MJE350 | 0.5 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| MJE224LEADFREE | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE240 | 制造商:Motorola Inc 功能描述: |
| MJE241 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE242 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJE243 | 功能描述:兩極晶體管 - BJT 4A 100V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE243_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS |