參數(shù)資料
型號: MJE18009BU
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 10 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁數(shù): 23/66頁
文件大?。?/td> 512K
代理商: MJE18009BU
MJE18009 MJF18009
3–752
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C.
≤ 10%, Pulse Width = 20 s)
Turn–on Time
IC = 3 Adc, IB1 = 0.3 Adc
IB2 =1 5Adc
@ TC = 25°C
@ TC = 125°C
ton
220
300
ns
Turn–off Time
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.28
1.6
2.5
s
Turn–on Time
IC = 5 Adc, IB1 = 1 Adc
IB2 =2 5Adc
@ TC = 25°C
@ TC = 125°C
ton
120
350
250
ns
Turn–off Time
IB2 = 2.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
2.2
2.6
2.5
s
Turn–on Time
IC = 7 Adc, IB1 = 1.4 Adc
IB2 =3 5Adc
@ TC = 25°C
@ TC = 125°C
ton
175
500
300
ns
Turn–off Time
IB2 = 3.5 Adc
VCC = 300 Vdc
@ TC = 25°C
@ TC = 125°C
toff
1.75
2.1
2.5
s
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H)
Fall Time
I3 Ad
@ TC = 25°C
@ TC = 125°C
tf
110
125
200
ns
Storage Time
IC = 3 Adc
IB1 = 0.3 Adc
IB2 = 1.5 Adc
@ TC = 25°C
@ TC = 125°C
ts
2
2.6
2.75
s
Crossover Time
IB2 1.5 Adc
@ TC = 25°C
@ TC = 125°C
tc
250
300
350
ns
Fall Time
I5 Ad
@ TC = 25°C
@ TC = 125°C
tf
110
135
200
ns
Storage Time
IC = 5 Adc
IB1 = 1 Adc
IB2 = 2.5 Adc
@ TC = 25°C
@ TC = 125°C
ts
2.4
3.1
3.5
s
Crossover Time
IB2 2.5 Adc
@ TC = 25°C
@ TC = 125°C
tc
260
300
350
ns
Fall Time
I7 Ad
@ TC = 25°C
@ TC = 125°C
tf
105
150
200
ns
Storage Time
IC = 7 Adc
IB1 = 1.4 Adc
IB2 = 3.5 Adc
@ TC = 25°C
@ TC = 125°C
ts
1.75
2.25
2.75
s
Crossover Time
IB2 3.5 Adc
@ TC = 25°C
@ TC = 125°C
tc
225
300
350
ns
相關PDF資料
PDF描述
MJE18204BG 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BS 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204AF 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204BU 5 A, 600 V, NPN, Si, POWER TRANSISTOR
MJE18204AJ 5 A, 600 V, NPN, Si, POWER TRANSISTOR
相關代理商/技術參數(shù)
參數(shù)描述
MJE180G 功能描述:兩極晶體管 - BJT 3A 40V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE180PWD 功能描述:TRANSISTOR NPN 40V 3A RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
MJE180STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE181 功能描述:兩極晶體管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE181G 功能描述:兩極晶體管 - BJT 3A 60V 12.5W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2