參數(shù)資料
型號： MJE18004BD
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 5 A, 450 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 56/66頁
文件大小： 504K
代理商： MJE18004BD
MJE18004 MJF18004
3–720
Motorola Bipolar Power Transistor Device Data
0.1
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
Figure 15. Forward Bias Safe Operating Area
POWER
D
ERA
T
ING
FA
CT
OR
Figure 16. Reverse Bias Safe
Operating Area
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate. The data of Figure 15 is based
on TC = 25°C; TJ(pk) is variable depending on power level.
Second breakdown pulse limits are valid for duty cycles to
10% but must be derated when T C ≥ 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Figure
15 may be found at any case temperature by using the
appropriate curve on Figure 17. TJ(pk) may be calculated
from the data in Figures 20 and 21. At any case tempera-
tures, thermal limitations will reduce the power that can be
handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn–off with the
base–to–emitter junction reverse biased. The safe level is
specified as a reverse–biased safe operating area (Figure
16). This rating is verified under clamped conditions so that
the device is never subjected to an avalanche mode.
hFE, FORCED GAIN
t fi
,F
ALL
T
IME
(
ns)
t c
,CROSSOVER
TIME
(ns)
I C
,C
OLLE
CT
OR
C
URREN
T
(AMPS
)
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
TC, CASE TEMPERATURE (°C)
GUARANTEED SAFE OPERATING AREA INFORMATION
3
6
12
15
9
70
4
5
7
8
10
11
13
14
3
6
12
15
50
4
5
13
14
10
1000
100
0.01
400
600
1100
900
0
500
800
700
1000
80
90
100
110
120
130
140
150
160
200
300
150
100
250
1.0
10
100
1.0
2.0
3.0
4.0
5.0
6.0
9
78
10
11
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1.0
0.8
0.6
0.4
0.2
0
160
140
120
100
80
60
40
20
IC = 2 A
IC = 1 A
TJ = 25°C
TJ = 125°C
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 H
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 H
IC = 1 A
IC = 2 A
TJ = 25°C
TJ = 125°C
1
s
10
s
50
s
1ms
5ms
DC (MJE18004)
DC (MJF18004)
Extended
SOA
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 H
VBE(off) =
0 V
–1.5 V
–5 V
SECOND
BREAKDOWN
DERATING
THERMAL
DERATING
相關(guān)PDF資料
PDF描述
MJE18004BA 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004AS 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004DW 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004BG 5 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18004AJ 5 A, 450 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MJE18004D2G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18006 功能描述:兩極晶體管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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