參數(shù)資料
型號: MJE18004
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS
中文描述: 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
文件頁數(shù): 4/12頁
文件大小: 466K
代理商: MJE18004
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
0.001
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
h
TJ = 125
°
C
TJ = 25
°
C
TJ = –20
°
C
VCE = 1 V
Figure 2. DC Current Gain @ 5 Volt
100
10
1
0.001
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
h
TJ = 125
°
C
TJ = –20
°
C
VCE = 5 V
Figure 3. Collector Saturation Region
3
2
0
10
1
0.1
IB, BASE CURRENT (mA)
0.01
IC = 500 mA
Figure 4. Collector–Emitter Saturation Voltage
10
1
0.1
10
1
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
0.001
TJ = 125
°
C
TJ = 25
°
C
TJ = –20
°
C
IC/IB = 5
V
V
1
TJ = 25
°
C
1 A
5 A
Figure 5. Collector–Emitter Saturation Voltage
10
1
0.1
10
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
0.001
Figure 6. Collector–Emitter Saturation Voltage
10
1
0.1
10
0.1
0.01
IC, COLLECTOR CURRENT (AMPS)
0.001
TJ = 125
°
C
TJ = –20
°
C
V
V
1
IC/IB = 10
TJ = 125
°
C
TJ = –20
°
C
IC/IB = 20
4 A
3 A
2 A
TJ = 25
°
C
TJ = 25
°
C
TJ = 25
°
C
1
相關(guān)PDF資料
PDF描述
MJE4342 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
MJE4343 POWER TRANSISTORS COMPLEMENTARY SILICON
MJE4343 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
MJE4352 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
MJE4353 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJE18004D2 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004D2G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18004G 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18006 功能描述:兩極晶體管 - BJT 6A 450V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJE18006G 功能描述:兩極晶體管 - BJT BIP NPN 8A 450V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2