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參數(shù)資料
| 型號： | MJE18002D2AS |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 43/60頁 |
| 文件大?。?/td> | 365K |
| 代理商： | MJE18002D2AS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁當前第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
Industry
Part Number
Motorola
Nearest
Replacement
Motorola
Similar
Replacement
Page
Number
1–19
Index and Cross Reference
Motorola Bipolar Power Transistor Device Data
INDEX AND CROSS REFERENCE (continued)
BUV47
BUV48
3–391
BUV47A
BUV48A
3–391
BUV48
3–391
BUV48A
3–391
BUV60
—
BUV98A
MJW18020
—
BUW13
MJW16010A
3–847
BUW13A
MJW16010A
3–847
BUW34
BUX48
3–401
BUW35
BUX48
3–401
BUW36
BUX48A
3–401
BUW44
BUX48
3–401
BUW45
BUX48
3–401
BUW46
BUX48A
3–401
BUW72
MJE13009
3–676
BUW74
BUX48
3–401
BUW75
BUX48
3–401
BUW76
BUX48
3–401
BUW77
BUX48
3–401
BUW84
MJE13003
3–655
BUW85
MJE13003
3–655
BUX11
—
BUX12
BUV11
3–376
BUX13
BUX48
3–401
BUX14
BUX48
3–401
BUX15
BUX48A
3–401
BUX17
BUX48
3–401
BUX17A
BUX48
3–401
BUX17B
BUX48
3–401
BUX17C
BUX48
3–401
BUX18
2N6544
—
BUX18A
2N6544
—
BUX18B
BUX48A
3–401
BUX18C
BUX48A
3–401
BUX21
BUV21
3–382
BUX41
3–398
BUX41N
BUX41
3–398
BUX42
BUX48
3–401
BUX43
BUX48
3–401
BUX47
BUX48
3–401
BUX47A
BUX48A
3–401
BUX48
3–401
BUX48A
3–401
BUX48S
BUX48
3–401
BUX82
BUX48A
3–401
BUX83
BUX48A
3–401
BUX84
BUX85
3–408
BUX85
3–408
BUX86
MJE13003
3–655
BUX87
MJE13003
3–655
BUX8O
2N6547
3–140
BUX98
—
BUX98A
—
BUY29
MJ410
3–417
BUY30
MJ423
3–419
BUY49P
MJE340
3–602
BUY69A
BUX48A
3–401
BUY69B
BUX48
3–401
D40C1
MJE800
3–612
D40C2
MJE800
3–612
D40C4
MJE800
3–612
D40C5
MJE800
3–612
D40D1
MJE181
3–589
D40D10
MJE182
3–589
D40D11
MJE182
3–589
D40D13
MJE182
3–589
D40D14
MJE182
3–589
D40D2
MJE181
3–589
D40D3
MJE181
3–589
D40D4
MJE181
3–589
D40D5
MJE181
3–589
D40D7
MJE181
3–589
D40D8
MJE181
3–589
D40E1
MJE181
3–589
D40E5
MJE181
3–589
D40E7
MJE182
3–589
D40K1
MJE800
3–612
D40K2
MJE800
3–612
D40K3
MJE800
3–612
D40K4
MJE800
3–612
D40N1
MJE340
3–602
D40N2
MJE340
3–602
D40N3
MJE340
3–602
D40N4
MJE340
3–602
D40P1
MJE341
3–604
D40P3
MJE344
3–604
D40P5
MJE340
3–602
D41C2
D44H8
3–411
D41D1
2N4918
3–34
D41D10
2N4920
3–34
D41D11
2N4920
3–34
D41D13
2N4920
3–34
D41D14
2N4920
3–34
D41D2
2N4918
3–34
D41D4
2N4919
3–34
D41D5
2N4919
3–34
D41D7
2N4919
3–34
D41D8
2N4919
3–34
D41E1
2N4918
3–34
D41E5
2N4919
3–34
D41E7
2N4920
3–34
D41K1
MJE700
3–612
D41K2
MJE700
3–612
D41K3
MJE700
3–612
D41K4
MJE700
3–612
D42C1
MJE181
3–589
D42C2
MJE181
3–589
D42C3
MJE181
3–589
D42C4
MJE171
3–589
D42C5
MJE171
3–589
D42C6
MJE171
3–589
D42C7
MJE171
3–589
D42C8
MJE171
3–589
D42C9
MJE171
3–589
D43C1
MJE181
3–589
D43C2
MJE181
3–589
D43C3
MJE181
3–589
D43C4
MJE171
3–589
D43C5
MJE171
3–589
D43C6
MJE171
3–589
D43C7
MJE171
3–589
D43C8
MJE171
3–589
D43C9
MJE171
3–589
D44D1
TIP101
3–891
D44D2
TIP101
3–891
D44D3
2N6044
3–89
相關PDF資料 |
PDF描述 |
|---|---|
| MJE18002D2DW | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BG | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2AU | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BU | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BV | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE18002G | 功能描述:兩極晶體管 - BJT 2A 450V 40W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2 | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004D2G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE18004G | 功能描述:兩極晶體管 - BJT 5A 1000V 75W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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