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參數(shù)資料
| 型號： | MJE13009BG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/65頁 |
| 文件大?。?/td> | 517K |
| 代理商： | MJE13009BG |
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3–676
Motorola Bipolar Power Transistor Device Data
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistors
The MJE13009 is designed for high–voltage, high–speed power switching inductive
circuits where fall time is critical. They are particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V and 300 V
Reverse Bias SOA with Inductive Loads @ TC = 100_C
Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C
...tc @ 8 A, 100_C is 120 ns (Typ).
700 V Blocking Capability
SOA and Switching Applications Information.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO(sus)
400
Vdc
Collector–Emitter Voltage
VCEV
700
Vdc
Emitter Base Voltage
VEBO
9
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
12
24
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
6
12
Adc
Emitter Current — Continuous
— Peak (1)
IE
IEM
18
36
Adc
Total Power Dissipation @ TA = 25_C
Derate above 25
_C
PD
2
16
Watts
mW/
_C
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
100
800
Watts
mW/
_C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
θJA
62.5
_C/W
Thermal Resistance, Junction to Case
R
θJC
1.25
_C/W
Maximum Lead Temperature for Soldering Purposes:
1/8
″ from Case for 5 Seconds
TL
275
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MJE13009
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
100 WATTS
*Motorola Preferred Device
*
CASE 221A–06
TO–220AB
REV 2
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| MJE1320DW | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BV | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320BA | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
| MJE1320AN | 2 A, 900 V, NPN, Si, POWER TRANSISTOR |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DL-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009F | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:TRIPLE DIFFUSED NPN TRANSISTOR |
| MJE13009G | 功能描述:兩極晶體管 - BJT 12A 400V 100W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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