參數(shù)資料
型號: MJE13009
元件分類: 功率晶體管
英文描述: 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 272K
代理商: MJE13009
2008. 3. 26
1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13009
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=8A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
-
1
mA
DC Current Gain
hFE(1) (Note)
VCE=5V, IC=5A
14
-
28
hFE(2)
VCE=5V, IC=8A
6
-
Collector-Emitter
Saturation Voltage
VCE(sat)
IC=5A, IB=1A
-
1
V
IC=8A, IB=1.6A
-
1.5
IC=12A, IB=3A
-
3
Base-Emitter Saturation Voltage
VBE(sat)
IC=5A, IB=1A
-
1.5
V
IC=8A, IB=1.6A
-
1.6
Collector Output Capacitance
Cob
VCB=10V, f=0.1MHz, IE=0
-
180
-
pF
Transition Frequency
fT
VCE=10V, IC=0.5A
4
-
MHz
Turn-On Time
ton
IB1
15
B1
I
CC
V
=125V
IB2
300
S
I
=I
=1.6A
2%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
1.1
S
Storage Time
tstg
-
3
S
Fall Time
tf
-
0.7
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
12
A
Pulse
ICP
24
Base Current
IB
6
A
Collector Power Dissipation
(Tc=25
)
PC
100
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note : hFE Classification
O:14
28
相關(guān)PDF資料
PDF描述
MJE13070-6258 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13070-DR6259 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13070-DR6260 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13070-DR6269 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13070-DR6274 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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