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參數(shù)資料
| 型號： | MJE13005BA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 34/63頁 |
| 文件大?。?/td> | 453K |
| 代理商： | MJE13005BA |
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MJE13005
3–664
Motorola Bipolar Power Transistor Device Data
trv
TIME
IC
VCE
90% IB1
tsv
ICPK
Vclamp
90% Vclamp
90% IC
10% Vclamp
10%
ICPK
2% IC
IB
tfi
tti
tc
Figure 7. Inductive Switching Measurements
Table 1. Typical Inductive Switching Performance
IC
AMP
TC
_C
tsv
ns
trv
ns
tfi
ns
tti
ns
tc
ns
2
25
100
600
900
70
110
100
240
80
130
180
320
3
25
100
650
950
60
100
140
330
60
100
200
350
4
25
100
550
850
70
110
160
350
100
160
220
390
NOTE: All Data recorded in the inductive Switching Circuit In Table 2.
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10–90% Vclamp
tfi = Current Fall Time, 90–10% IC
tti = Current Tail, 10–2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is
shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25
°C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
t,TIME
(
s)
t,TIME
(
s)
Figure 8. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
tr
td @ VBE(off) = 5 V
0.02
0.01
1
0.5
0.2
IC, COLLECTOR CURRENT (AMP)
0.4
4
12
0.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.05
0.1
Figure 9. Turn–Off Time
0.2
0.1
10
5
1
0.5
4
12
0.04
VCC = 125 V
IC/IB = 5
TJ = 25°C
0.2
0.3
0.5
0.1
2
ts
tf
RESISTIVE SWITCHING PERFORMANCE
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