參數(shù)資料
型號: MJE13005
元件分類: 功率晶體管
英文描述: 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 436K
代理商: MJE13005
2008. 3. 26
1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FLUORESCENT LIGHT BALLASTOR APPLICATION.
FEATURES
Excellent Switching Times
: ton=0.8 S(Max.), tf=0.9 S(Max.), at IC=2A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25
)
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Emitter Cut-off Current
IEBO
VEB=9V, IC=0
-
1
mA
DC Current Gain
hFE(1) (Note)
VCE=5V, IC=1A
18
-
35
hFE(2)
VCE=5V, IC=2A
10
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=0.2A
-
0.5
V
IC=2A, IB=0.5A
-
0.6
IC=4A, IB=1A
-
1
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=0.2A
-
1.2
V
IC=2A, IB=0.5A
-
1.6
Collector Output Capacitance
Cob
VCB=10V, f=0.1MHz, IE=0
-
65
-
pF
Transition Frequency
fT
VCE=10V, IC=0.5A
4
-
MHz
Turn-On Time
ton
IB1
62.5
B1
I
CC
V
=125V
IB2
300
S
I
=I
=0.4A
2%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
<
=
-
0.8
S
Storage Time
tstg
-
4
S
Fall Time
tf
-
0.9
S
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
700
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
4
A
Pulse
ICP
8
Base Current
IB
2
A
Collector Power Dissipation
(Tc=25
)
PC
75
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
Note : hFE Classification
R:18
27, O:23
35
相關PDF資料
PDF描述
MJE13007A 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007F-BP 8 A, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007F 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007F-O 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE13007G-TF3-T 8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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