參數(shù)資料
型號(hào)： MJE13005
廠商： MICRO COMMERCIAL COMPONENTS
元件分類(lèi)： 功率晶體管
英文描述： 4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝： PLASTIC, TO-220, 3 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 229K
代理商： MJE13005
MJE13005
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 4.0A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
OC to +150OC
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
400
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1000uAdc, IE=0)
700
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1000uAdc, IC=0)
9.0
Vdc
ICBO
Collector Cutoff Current
(VCB=700Vdc, IE=0)
1000
uAdc
ICEO
Collector Cutoff Current
(VCE=400Vdc,IB=0)
100
uAdc
IEBO
Emitter Cutoff Current
(VEB=9.0Vdc, IC=0)
1000
uAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(IC=1000mAdc, VCE=5.0Vdc
10
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2000mAdc, IB=500mAdc)
0.6
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=2000mAdc, IB=500mAdc)
1.6
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Trans istor Frequency
(IC=500mAdc, VCE=10Vdc, f=1.0MHz)
5.0
MHz
tF
Fall Time
0.9
uS
tS
Storage Time
VCC=120V,IC=2.0A
IB1=IB2=0.4A
4.0
uS
INCHES
MM