參數(shù)資料
型號(hào): MJD44H11
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
中文描述: 8 A, 80 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/4頁
文件大小: 80K
代理商: MJD44H11
3
Motorola Bipolar Power Device Data
PACKAGE DIMENSIONS
CASE 369–07
ISSUE K
STYLE 1:
PIN 1.
BASE
COLLECTOR
EMITTER
COLLECTOR
2.
3.
4.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 2:
PIN 1.
GATE
DRAIN
SOURCE
DRAIN
2.
3.
4.
STYLE 3:
PIN 1.
ANODE
CATHODE
ANODE
CATHODE
2.
3.
4.
STYLE 4:
PIN 1.
CATHODE
ANODE
GATE
ANODE
2.
3.
4.
STYLE 5:
PIN 1.
GATE
ANODE
CATHODE
ANODE
2.
3.
4.
1
2
3
4
V
S
A
K
–T–
SEATING
PLANE
R
B
F
G
D
3 PL
0.13 (0.005)
M
T
C
E
J
H
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
MIN
0.235
0.250
0.086
0.027
0.033
0.037
0.090 BSC
0.034
0.018
0.350
0.175
0.050
0.030
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
2.29 BSC
0.87
0.46
8.89
4.45
1.27
0.77
MAX
6.35
6.73
2.38
0.88
1.01
1.19
MILLIMETERS
INCHES
0.040
0.023
0.380
0.215
0.090
0.050
1.01
0.58
9.65
5.46
2.28
1.27
CASE 369A–13
ISSUE W
STYLE 1:
PIN 1.
BASE
COLLECTOR
EMITTER
COLLECTOR
2.
3.
4.
STYLE 2:
PIN 1.
GATE
DRAIN
SOURCE
DRAIN
2.
3.
4.
STYLE 3:
PIN 1.
ANODE
CATHODE
ANODE
CATHODE
2.
3.
4.
STYLE 4:
PIN 1.
CATHODE
ANODE
GATE
ANODE
2.
3.
4.
STYLE 5:
PIN 1.
GATE
ANODE
CATHODE
ANODE
2.
3.
4.
D
A
K
B
R
V
S
F
L
G
2 PL
0.13 (0.005)
M
T
E
C
U
J
H
–T–
SEATING
PLANE
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.033
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.175
0.020
0.020
0.030
0.138
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.45
0.51
0.51
0.77
3.51
MAX
6.35
6.73
2.38
0.88
1.01
1.19
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.050
–––
0.050
–––
5.46
1.27
–––
1.27
–––
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
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