- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369917 > MJD42CT4 (MOTOROLA INC) SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS PDF資料下載
參數(shù)資料
| 型號： | MJD42CT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS |
| 中文描述： | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 195K |
| 代理商： | MJD42CT4 |
1
Motorola Bipolar Power Transistor Device Data
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Monolithic Construction With Built–in Base–Emitter Resistors
MJD42C
Peak
10
Base Current
2
Adc
Derate above 25 C
20
0.16
Watts
W/ C
Total Power Dissipation* @ TA = 25 C
PD
1.75
Watts
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD41C/D
CASE 369A–13
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS
20 WATTS
*Motorola Preferred Device
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0
6
0
1
0
3
0
1
0
4
0
4
inches
mm
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD50 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50T4 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50-1 | NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS |
| MJD50 | High Voltage and High Reliability D-PAK for Surface Mount Applications |
| MJD6036 | SILICON POWER TRANSISTORS 4 AMPERES 80 VOLTS 20 WATTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD42CT4G | 功能描述:兩極晶體管 - BJT 6A 100V 20W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD42CTF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD44 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON PNP TRANSISTORS |
| MJD44E3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS |
| MJD44E3-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。