參數(shù)資料
型號： MJD340T4
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
中文描述： 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 3/4頁
文件大小： 194K
代理商： MJD340T4
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1
0.01
0.01
0.5
0.2
0.1
0.07
0.05
0.02
r
0.05
1
2
5
10
20
50
100
200
1 k
500
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 8.33
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
SINGLE PULSE
0.1
0.7
0.3
0.03
0.02
0.1
0.5
0.2
Figure 5. Thermal Response
R
0.03
0.3
3
30
300
0.01
I
1000
10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1
20
30
50
70
100
200
500
300
500
μ
s
Figure 6. Active Region Safe Operating Area
200 300
500 700 1000
100
20
50
30
10
2
5
3
1 ms
dc
100
μ
s
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150 C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150 C. TJ(pk) may be calculated from the data in Fig-
ure 5. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 7. Power Derating
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
TC
TA (SURFACE MOUNT)
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MJD340TF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD340TF 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR NPN 300V 3-D-PAK
MJD350 功能描述:兩極晶體管 - BJT 0.5A 300V 15W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJD350-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS
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