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參數(shù)資料
| 型號： | MJD32TF |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 109K |
| 代理商： | MJD32TF |
2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD32/
32C
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤300s, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: MJD32
: MJD32C
- 40
- 100
V
VCEO
Collector-Emitter Voltage
: MJD32
: MJD32C
- 40
- 100
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 3
A
ICP
Collector Current (Pulse)
- 5
A
IB
Base Current
- 1
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: MJD32
: MJD32C
IC = - 30mA, IB = 0
-40
-100
V
ICEO
Collector Cut-off Current
: MJD32
: MJD32C
VCE = - 40V, IB = 0
VCE = - 60V, IB = 0
-50
A
ICES
Collector Cut-off Current
: MJD32
: MJD32C
VCE = - 40V, VBE = 0
VCE = - 100V, VBE = 0
-20
A
IEBO
Emitter Cut-off Current
VBE = - 5V, IC = 0
-1
mA
hFE
* DC Current Gain
VCE = - 4V, IC = - 1A
VCE = - 4V, IC = - 3A
25
10
50
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = - 3, IB = - 375mA
-1.2
V
VBE(on)
* Base-Emitter ON Voltage
VCE = - 4A, IC = - 3A
-1.8
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = - 500mA
3
MHz
MJD32/32C
General Purpose Amplifier Low Speed
Switching Applications
D-PAK for Surface Mount Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP32 and TIP32C
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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| MJD32I | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD340 | 功能描述:兩極晶體管 - BJT 0.5A 300V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD340_03 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| MJD340_11 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Voltage Power Transistors |
| MJD340-1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS |
| MJD340-13 | 功能描述:兩極晶體管 - BJT HIGH VOLTAGE NPN SMT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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