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參數(shù)資料
| 型號(hào)： | MJD31I |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-251 |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MJD31I |
MJD31/31C
—
NPN
Epit
axial
Silicon
T
rans
istor
2010 Fairchild Semiconductor Corporation
www.fairchildsemi.com
MJD31/31C Rev. A3
1
November 2010
MJD31/31C
NPN Epitaxial Silicon Transistor
Features
General Purpose Amplifier
Low Speed Switching Applications
Load Formed for Surface Mount Application (No Suffix)
Straight Lead (I-PAK, “- I” Suffix)
Electrically Similar to Popular TIP31 and TIP31C
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
* Pulse Test: PW
≤300μs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: MJD31
: MJD31C
40
100
V
VCEO
Collector-Emitter Voltage
: MJD31
: MJD31C
40
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
3
A
ICP
Collector Current (Pulse)
5
A
IB
Base Current
1
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 to 150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: MJD31
: MJD31C
IC = 30mA, IB = 0
40
100
V
ICEO
Collector Cut-off Current
: MJD31
: MJD31C
VCE = 40V, IB = 0
VCE = 60V, IB = 0
50
μA
ICES
Collector Cut-off Current
: MJD31
: MJD31C
VCE = 40V, VBE = 0
VCE = 100V, VBE = 0
20
μA
IEBO
Emitter Cut-off Current
VBE = 5V, IC = 0
1
mA
hFE
* DC Current Gain
VCE = 4V, IC = 1A
VCE = 4V, IC = 3A
25
10
50
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 3A, IB = 375mA
1.2
V
VBE(on)
* Base-Emitter On Voltage
VCE = 4A, IC = 3A
1.8
V
fT
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
3
MHz
1.Base
2.Collector
3.Emitter
D-PAK
I-PAK
11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD31T4 | 功能描述:兩極晶體管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31T4G | 功能描述:兩極晶體管 - BJT 3A 40V 15W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD31TF | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD32 | 制造商:Motorola Inc 功能描述: |
| MJD32/32C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Amplifier Low Speed Switching Applications |
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